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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2752 DESCRIPTION With TO-126 package High breakdown voltage Low collector saturation voltage APPLICATIONS Low power switching regulator DC-DC converter High voltage switch PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER INC Collector-base voltage Collector-emitter voltage E SEM ANG H OND IC CONDITIONS TOR UC VALUE 500 400 7 0.5 1.0 0.25 UNIT V V V A A A Open emitter Open base Open collector Emitter-base voltage Collector current Collector current-peak Base current Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 1.0 W 10 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC2752 SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.3A; IB1=0.06A,L=10mH 400 V VCEsat VBEsat Collector-emitter saturation voltage IC=300mA; IB=60mA IC=300mA; IB=60mA VCE=400V; VBE=-1.5V TC=125ae VEB=5V; IC=0 1.0 V Base-emitter saturation voltage 1.2 0.01 1.0 10 |I V ICEX Collector cut-off current mA IEBO Emitter cut-off current A hFE-1 DC current gain IC=50mA ; VCE=5V 20 80 hFE -2 DC current gain IC=300mA ; VCE=5V Switching times ton Fall time Turn-on time tstg tf CHA IN Storage time E SEM NG IC=300mA; IB1=-IB2=60mA PWO 50|I s;VCCO 150V RL=500| OND IC TOR UC 1.0 |I 2.5 |I 1.0 |I 10 s s s hFE-1 Classifications M 20-40 L 30-60 K 40-80 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2752 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 |
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